Journal of Interfaces, Thin Films, and Low dimensional systems
An evaluation for CIGS based thin-film solar cells development
Document Type : Review Article
Author
Department of Physics, Naragh Branch, Islamic Azad University, Naragh, Iran
Abstract
This review summarizes the current status of chalcopyrite CIGS thin film solar cell technology with a focus on recent advancements and emerging concepts intended for higher efficiency and novel applications. The recent developments and trends of research in labs and industrial achievements communicated within the last years are reviewed and the major developments linked to alkali post deposition treatment and composition grading in CIGS, surface passivation, buffer and transparent contact layers are emphasized. In recent years, a lot of efforts have been initiated to develop low-cost thin-film solar cells, which are alternatives to high-cost silicon (Si) solar cells. Copper Indium Gallium Selenide (CIGS) based solar cells have become one of the most promising candidates among the thin film technologies for solar power generation. The current record efficiency of CIGS has reached 22.6%, which exceeds the current multi crystalline Si record efficiency (21.9%). However, material properties and efficiency on small area devices are crucial aspects to be considered before manufacturing into large scale. Chalcopyrite-based solar cells were first developed using CuInSe_2 absorber material, but it was quickly become dependent on the [Ga⁄((In+Ga)]) ratio.
Keywords
Article Title [Persian]
ارزیابی توسعه سلول های خورشیدی لایه نازک مبتنی بر CIGS
Author [Persian]
- مجتبی جمعیتی
گروه فیزیک، واحد نراق، دانشگاه آزاد اسلامی، نراق، ایران
Abstract [Persian]
این مطالعه وضعیت فعلی فناوری سلول های خورشیدی لایه نازک کالکوپیریت CIGS را با تمرکز بر پیشرفت های اخیر و مفاهیم نوظهور در نظر گرفته شده برای کارایی بالاتر و کاربردهای جدید خلاصه می کند. پیشرفت‌ها و روندهای اخیر تحقیقات در آزمایشگاه‌ها و دستاوردهای صنعتی که در سال‌های گذشته گزارش گردیده، مورد بررسی قرار گرفته است و پیشرفت‌های عمدتاً مرتبط با فلزات قلیایی و ترکیبات متنوع سلول‌های مبتنی بر CIGS، غیرفعال‌سازی سطح، لایه بافر و لایه‌های تماس شفاف مورد تاکید قرار گرفته‌اند. در سال‌های اخیر، تلاش‌های زیادی برای توسعه سلول‌های خورشیدی لایه نازک کم‌هزینه، که جایگزین سلول‌های خورشیدی سیلیکونی (Si) پرهزینه هستند، آغاز شده است. سلول های خورشیدی مبتنی بر گالیوم سلنید مس ایندیم (CIGS) به یکی از امیدوارکننده ترین کاندیدها در میان فناوری های لایه نازک برای تولید انرژی خورشیدی تبدیل شده اند. ماکزیمم بازده فعلی سلول‌های CIGS به 6/22٪ رسیده است که از ماکزیمم بازده سلول‌های چند بلوری سیلیکون (9/21٪) فراتر رفته است. با این حال، خواص و کارایی مواد در دستگاه‌های با مساحت کوچک، جنبه‌های مهمی هستند که باید قبل از تولید در مقیاس بزرگ در نظر گرفته شوند. سلول های خورشیدی مبتنی بر کالکوپیریت ابتدا با استفاده از مواد جاذب ساخته شدند، اما به سرعت به نسبت [Ga⁄((In+Ga)]) وابسته شدند.
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