Journal of Interfaces, Thin Films, and Low dimensional systems

Morphology control of chemically deposited nanostructured PbS thin films

Document Type : Original Article

Authors

1 Nanotechnology Research Center, Research Institute of Petroleum Industry

2 Research Department of Semiconductor, Materials and Energy Research Center

3 Department of Physics, Malek-Ashtar University of Technology, Isfahan, Iran

Abstract

PbS thin films were grown on glass substrates by chemical bath deposition (CBD) using lead nitrate, thiourea and sodium hydroxide in aqueous solutions during different deposition times (30-150 min.). The microstructure and morphology of the films were investigated using X-ray diffraction, field emission scanning electron microscopy and atomic force microscopy. The results indicate that deposition time is an important parameter in determining the dominant mechanism of deposition and consequently the characteristics of the film. The active deposition mechanism changes from cluster to ion-by-ion mechanism during the deposition reaction. Therefore, film properties such as shape, size, roughness and preferred orientation change completely.

Keywords

Article Title [Persian]

کنترل مورفولوژی لایه نازک نانوساختار PbS ترسیب شده به روش شیمیایی از طریق مکانیسم رسوب

Authors [Persian]

  • هاجر فرشیدی 1
  • علیمراد رشیدی 1
  • امیرعلی یوزباشی 2
  • مهدی حیدری ثانی 3

1 مرکز تحقیقات نانو، پژوهشگاه صنعت نفت، تهران، ایران

2 پژوهشکده نیمه هادی ها، پژوهشگاه مواد و انرژی، کرج، ایران

3 گروه فیزیک، دانشگاه صنعتی مالک اشتر، شاهین شهر، اصفهان، ایران

Abstract [Persian]

 لایه‌های نازک سولفید سرب به روش رسوب حمام شیمیای (CBD) با استفاده از نیترات سرب، تیواوره و هیدروکسید سدیم با زمانهای رسوب متفاوت ( بین 30 تا 150 دقیقه) روی زیرلایه شیشه رشد داده شد. میکروساختار و مورفولوژی لایه‌های نازک با استفاده از الگوی پراش اشعه X، میکروسکوپ الکترونی روبشی نشر میدانی و میکروسکوپ نیروی اتمی بررسی شد. نتایج نشان می‌دهد که زمان رسوب یک پارامتر مهم در تعیین مکانیسم غالب رسوب و در نتیجه ویژگی های لایه نازک است. در طی واکنش رسوب، مکانیسم غالب رسوب از مکانیسم خوشه‌ای (cluster) به یون به یون تغییر می‌کند. بنابراین خصوصیات لایه نازک مانند شکل، اندازه، زبری و جهت‌گیری ترجیحی کاملا تغییر می‌کند.

Keywords [Persian]

  • لایه نازک سولفید سرب
  • رسوب حمام شیمیایی
  • مکانیسم رسوب
  • زمان رسوب
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Journal of Interfaces, Thin Films, and Low dimensional systems
Volume 3, Issue 1
December 2019
Pages 245-250