مجله فصل مشترک ها، لایه های نازک و سیستم های با بعد کم
تاثیر فشار و دما بر ترانزیستورهای اثر میدان با تحرک بالای الکترونی AlGaN/GaN
نوع مقاله : مقاله پژوهشی
نویسنده
گروه فیزیک، دانشگاه آزاد اسلامی، واحد خوی، خوی، ایران
چکیده
در این مقاله، جریان درین- سورس، رسانندگی متقابل و فرکانس قطع در ترانزیستورهای با تحرک پذیری بالای الکترونی AlGaN/GaN مورد بررسی قرار گرفته است. برای به دست آوردن دقیق پارامترهای ترانزیستورهای با تحرک بالای الکترونی (همت) AlGaN/GaN مانند چگالی الکترون، عملکرد موج، گاف نواری، قطبش پذیری، جرم موثر و ثابت دی الکتریک؛ اثرات فشار هیدرواستاتیک و دما مورد بررسی قرار می گیرند. نتایج حاصله نشانگر این است که جریان درین-سورس با افزایش دمای کاهش می یابد و با افزایش فشار هیدرواستاتیکی افزایش می یابد. افزایش دما معادل یک گیت مجازی منفی و افزایش فشار هیدرواستاتیک برابر با ولتاژ گیت مجازی مثبت است. همچنین در ساختارهای HEMT وابستگی جرم مؤثر به دما و فشار هیدرواستاتیک بررسی شده است و مشاهده می شود که افزایش فشار هیدرواستاتیک جرم موثر و نفوذ تابع موج را به سد کوانتمی AlGaN کاهش می دهد. به طور کلی، فرایند افزایش و کاهش فرکانس قطع و رسانندگی متقابل مشابه تغییرات در جریان درین- سورس است. نتایج محاسبه شده با داده های تجربی موجود تطابق خوبی دارند.
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