مجله فصل مشترک ها، لایه های نازک و سیستم های با بعد کم
اثر ناخالصی تک اتم کربن بر ترابرد الکترونیکی نانولوله ی نیترید بور دو سر بسته ی (6،0)
نوع مقاله : مقاله پژوهشی
نویسنده
گروه فیزیک، دانشگاه آزاد اسلامی، واحد آیت الله آملی، آمل، ایران
چکیده
این مطالعه اثر ناخالصی تک اتم کربن را بر خواص الکترونیکی نانولوله دو سر بسته نیترید بور (0و6) در مرکز، چپ و راست بررسی نموده است. شکاف باند با اعمال ناخالصی تک اتم کربن به طور قابل توجهی کاهش یافته است. بیشتر تغییرات در شکاف باند مربوط به ناخالصی اتم کربن در مرکز این نانولوله می باشد. مقایسه نمودارهای طیف انتقال و چگالی حالات نشان می دهد که در نقاطی از انرژی که رزونانس بین الکترون برخورد و سطوح مولکولی رخ می‌دهد، قله‌های ضریب انتقال نزدیک به سطوح مولکولی اتفاق می افتد که منجر به ترابرد و هدایت الکترونی می‌شود. علاوه بر این، با وجود نظم موجود در آرایش اتم های بور و نیتروژن در دو طرف نانولوله و تأثیر مثبت اثر تداخل در دو طرف این نانولوله، با افزایش ولتاژ بایاس، به ویژه در پایین ولتاژ بایاس، کاهش قابل مشاهده ای در مقدار جریان وجود ندارد. به طور کلی، وجود مقاومت منفی برحسب ولتاژ بایاس می تواند به عنوان یک کلید الکترونیکی پرسرعت استفاده شود.
کلیدواژه‌ها
موضوعات
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