ارزیابی توسعه سلول های خورشیدی لایه نازک مبتنی بر CIGS

نوع مقاله : مقاله مروری

نویسنده

گروه فیزیک، واحد نراق، دانشگاه آزاد اسلامی، نراق، ایران

چکیده

این مطالعه وضعیت فعلی فناوری سلول های خورشیدی لایه نازک کالکوپیریت CIGS را با تمرکز بر پیشرفت های اخیر و مفاهیم نوظهور در نظر گرفته شده برای کارایی بالاتر و کاربردهای جدید خلاصه می کند. پیشرفت‌ها و روندهای اخیر تحقیقات در آزمایشگاه‌ها و دستاوردهای صنعتی که در سال‌های گذشته گزارش گردیده، مورد بررسی قرار گرفته است و پیشرفت‌های عمدتاً مرتبط با فلزات قلیایی و ترکیبات متنوع سلول‌های مبتنی بر  CIGS، غیرفعال‌سازی سطح، لایه بافر و لایه‌های تماس شفاف مورد تاکید قرار گرفته‌اند. در سال‌های اخیر، تلاش‌های زیادی برای توسعه سلول‌های خورشیدی لایه نازک کم‌هزینه، که جایگزین سلول‌های خورشیدی سیلیکونی (Si) پرهزینه هستند، آغاز شده است. سلول های خورشیدی مبتنی بر گالیوم سلنید مس ایندیم (CIGS) به یکی از امیدوارکننده ترین کاندیدها در میان فناوری های لایه نازک برای تولید انرژی خورشیدی تبدیل شده اند. ماکزیمم بازده فعلی سلول‌های CIGS به 6/22٪ رسیده است که از ماکزیمم بازده سلول‌های چند بلوری سیلیکون (9/21٪) فراتر رفته است. با این حال، خواص و کارایی مواد در دستگاه‌های با مساحت کوچک، جنبه‌های مهمی هستند که باید قبل از تولید در مقیاس بزرگ در نظر گرفته شوند. سلول های خورشیدی مبتنی بر کالکوپیریت ابتدا با استفاده از مواد جاذب  ساخته شدند، اما به سرعت به نسبت [Ga⁄((In+Ga)]) وابسته شدند.

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