مجله فصل مشترک ها، لایه های نازک و سیستم های با بعد کم
تاثیر آهنگ انباشت بر مشخصات اپتیکی و ریزساختاری لایه های نانوساختار ZnSe تهیه شده با روش تبخیر حرارتی
نوع مقاله : مقاله پژوهشی
نویسندگان
1 گروه فیزیک، دانشکده علوم، دانشگاه شهرکرد، ایران
2 گروه فیزیک، دانشگاه شهرکرد،شهرکرد، ایران
3 دانشکده فیزیک، دانشگاه اصفهان، اصفهان، ایران
چکیده
در این پژوهش ، لایه های نازک ZnSe با روش تبخیر حرارتی با آهنگ انباشت 0.2 ، 0.4 ، 0.6 و 0.8 نانومتر بر ثانیه و با ضخامت ثابت 250 نانومتر بر روی بستره شیشه ای انباشت شدند. همه نمونه ها به مدت 100 دقیقه در دمای 400 درجه سانتیگراد آنیل شدند. تکنیک های مختلفی مانند طیف سنجی UV-Vis ، آنالیز پراش اشعه X (XRD) و میکروسکوپ الکترونی روبشی (SEM) برای بررسی پارامترهای فیزیکی مختلف مانند گاف انرژی ، ضریب شکست ، ضریب خاموش شدن ، ثابت دی الکتریک و تخلخل استفاده شد. تأثیر آهنگ انباشت بر پارامترهای ذکر شده مورد بررسی قرار گرفت. طیف‌های XRD نشان داد که لایه های نازک ZnSe دارای ساختار مکعبی هستند و پارامترهای ساختاری مانند ثابت شبکه ، اندازه بلورها ، کرنش و چگالی دررفتگی برای نمونه های مختلف تعیین شد. حداکثر میانگین عبور93.1٪ در ناحیه طول موج مرئی برای آهنگ انباشت 0.6 (نانومتر بر ثانیه) بدست آمد. گاف انرژی با استفاده از روش استخراج از برازش طیف جذب (DASF) محاسبه شد و مقادیر گاف انرژی در محدوده 3.71±0.01 تا 3.98±0.01 الکترون ولت بدست آمد. در نهایت، رابطه بین ویژگی های اپتیکی و ریزساختاری لایه های ZnSe مورد مطالعه قرار گرفت.
کلیدواژه‌ها
موضوعات
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