Journal of Interfaces, Thin Films, and Low dimensional systems

The effect of pH on the optical band gap of PbSe thin film with usability in the quantum dot solar cell and photocatalytic activity

Document Type : Original Article

Authors

Department of Physics, Faculty of Science, Malayer University, Malayer 65719-95863, I.R. Iran

Abstract

This study was an attempt to provide a simple solution processed synthesis route for Lead Selenide (PbSe) nanostructure thin films using the chemical bath deposition (CBD) method which is commercially available in inexpensive precursors. In the CBD method, the preparation parameters play a considerable role and determine the nature of the final product formed. Known as two main factors, the effects of complex agent (PH) and time of reaction to the evolution of the configuration and the optical band gap of PbSe nanostructured with self-assemble arrays were investigated in this study. These preparation parameters were tuned to the effect that the nanostructured semiconductors had the band gaps of around 1.4 eV and they could therefore be used for the quantum dot solar cell. The films were characterized by X-ray diffraction (XRD), UV-visible spectroscopy for energy band gap estimation and scanning electron microscopy (SEM) to morphology investigation as well as size distribution. The change in the pH altered the optical band gap from 3.56 to 1.4 eV. The exceptional photo-catalytic behavior from the increased visible light absorption supported the separation of photo-generated electrons and holes, and it also improved the photo-catalytic oxidizing species with the PbSe nanostructured thin films.

Keywords

Main Subjects

Article Title [Persian]

تأثیر pH بر گاف نواری لایه های نازک سلنید سرب و بررسی فعالیت فوتوکاتالیستی

Authors [Persian]

  • نادر قبادی
  • پریسا سهرابی
  • غلامحسین حیدری
  • سیده ساجده حائری

Abstract [Persian]

ساده لایه نشانی حمام شیمیایی (CBD) شد که از لحاظ تجاری پیش ماده های ارزان و در دسترسی دارد. در روش لایه نشانی حمام بخار شیمیایی، عوامل ساخت نقش قابل ملاحظه ای را ایفا کرده و خصلت محصول نهایی را تعیین می کنند. در این پژوهش، تأثیر دوعامل مهم، pH عامل کمپلکس ساز و زمان لایه نشانی بر کیفیت پیکربندی و ساختار و گاف نواری اپتیکی لایه نازک سلنید سرب مورد بررسی قرار گرفته شد. این عوامل ساخت طوری تنظیم شده اند تا لایه نازک نیمه رسانای سلنید سرب گاف نواری تقریبی eV 4/1 داشته باشد و بدین ترتیب مناسب استفاده در سلول خورشیدی نقطه کوانتومی باشد. لایه های مذکور توسط پراش پرتو (XRD) X برای تعیین ساختار و بلورینگی، میکرسکوپ الکترونی روبشی (SEM) به منظور ریخت شناسی و توزیع اندازه ذرات و اسپکتروسکوپی مرئی-فرابنفش برای تعیین میزان جذب و گاف انرژی نواری نوری (UV-Vis) مشخصه یابی شدند. تغییر در pH عامل کمپلکس ساز، گاف انرژی نواری را از 56/3 تا 4/1 الکترون ولت تغییر داد. رفتار فوتوکاتالیستی لایه نازک سلنید سرب به منظور از بین بردن آلودگی Congo Red تحت نور مرئی مورد آزمایش قرار گرفته شد و فعالیت این فوتوکاتالیست در اکسید کردن آلودگی مناسب ارزیابی شد.

Keywords [Persian]

  • لایه نازک نانوساختار
  • گاف انرژی نواری نوری
  • عامل کمپلکس ساز
  • زمان واکنش و فعالیت فوتوکاتالیستی
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Journal of Interfaces, Thin Films, and Low dimensional systems
Volume 2, Issue 1
November 2018
Pages 139-147