Journal of Interfaces, Thin Films, and Low dimensional systems
Keywords = AlGaN/GaN HEMTs
Number of Articles: 1
Effects of hydrostatic pressure and temperature on the AlGaN/GaN high electron mobility transistors
Volume 2, Issue 2, May 2019, Pages 183-194
Rajab Yahyazadeh
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Volume 2, Issue 2, May 2019, Pages 183-194
Rajab Yahyazadeh